Presentation description

The current model for semiconductor design is reaching its limits on how much it can downsize while still maintaining its efficiency. MnBi2Te4 (MBT) is a possible new material for spintronic applications because of its unique magnetic and spin properties as an intrinsically antiferromagnetic topological insulator. However, this material is difficult to grow due to the narrow temperature region that is required to grow it. This project explores two possible synthesis routes: flux and chemical vapor transport (CVT) growth method. In the flux growth method, the MBT single crystals are grown in excess Bi2Te3 flux in an 863 to 873K temperature region. For the CVT growth method, the crystals are grown using an iodide transport agent within a 3-zone furnace with a 3K temperature gradient. These crystals are characterized using powder and crystal x-ray diffraction to confirm its phase and space group. Overall, the CVT growth crystals are higher quality than the flux grown crystals. However, the crystals grown have manganese deficiencies indicating that the target crystal has not been grown.