Faculty mentor: Heayoung Yoon
This project focused on understanding the rate of growth of SiO2 (silicon dioxide) on trenches and planar Si (silicon) samples. This was done using rigorous cleaning processes and thermal oxidation methods. This research can then be used to fabricate Si micro/nano pillars and measure the electrical and optical properties.
Watch my research presentation below.
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Questions or comments? Contact me at: email@example.com